PART |
Description |
Maker |
KMM5324000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
KMM5328000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
AEPDH1M8LB-12 AEPDS1M8LB-85P AEPDH1M8LB-10P AEPDH1 |
1M X 8 MULTI DEVICE DRAM MODULE, 120 ns, SMA28 SIMM-28 1M X 8 MULTI DEVICE DRAM MODULE, 85 ns, SMA28 SIMM-28 1M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
KMM5361203C2W |
1M x 36 DRAM SIMM(1M x 36 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KMM53216004CK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM5362000B2 KMM5362000B2G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
KMM5362000BH |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
KMM5328004CSWG KMM5328004CSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM53632000BK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
KMM53216004CK KMM53216004CKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
CL001E08320B0EJ-60 CL001E08320B0DT-60 CL001E08320B |
8M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72 SIMM-72
|
Fox Electronics
|